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Spin Valve: GMR/TMR Hysteresis and the Two-Current Model

An interactive spin valve. In the metallic case the two-current model treats spin-up and spin-down electrons as independent parallel channels, giving a parallel-state resistance $R_P = 2 R_{\uparrow} R_{\downarrow}/(R_{\uparrow} + R_{\downarrow})$ and an antiparallel-state resistance $R_{AP} = (R_{\uparrow} + R_{\downarrow})/2$, so $R_P \le R_{AP}$ always (the arithmetic-harmonic mean inequality) and $\mathrm{GMR} = (R_{AP} - R_P)/R_P = (R_{\uparrow} - R_{\downarrow})^2/(4 R_{\uparrow} R_{\downarrow}) = \beta^2/(1 - \beta^2)$ with channel asymmetry $\beta$. In the tunnel-junction case the Julliere model gives $\mathrm{TMR} = 2 P_1 P_2/(1 - P_1 P_2)$ with electrode spin polarisations $P_1, P_2$. A soft free layer switches at $\pm H_{c,\mathrm{free}}$ while an exchange-biased pinned layer stays fixed, so sweeping the applied field traces a hysteretic $R(H)$ loop that toggles between the low-resistance parallel state and the high-resistance antiparallel state. Sweeping the applied field through the two coercive fields toggles the stack between the low-resistance parallel and high-resistance antiparallel states, tracing the hysteretic $R(H)$ loop that giant magnetoresistance (GMR) read heads exploit.

Figure 1. A spin valve: sweeping the applied field flips the soft free layer at its coercive field while the pinned layer stays fixed, so the stack toggles between the low-resistance parallel state and the high-resistance antiparallel state, tracing a hysteretic magnetoresistance loop set by the two-current (GMR) or Julliere (TMR) model. Method: two-current series-resistor GMR and Julliere TMR, hysteretic free/pinned switching; deterministic.
model
spin polarization P0.50
free-layer Hc0.30

WHAT TO TRY

  • Vary each control and watch the rail readouts respond.
  • Compare the diagnostic plot against the live scene.